The CSD17382F4 gate ESD structure can be thought of as two series diodes with common cathodes with an anode connected to gate and an anode connected to source.
Based on back-to-back diodes, these devices are dedicated to first stage, external ESD protection. The main feature consists in using deep trenches, usually.
A 3D technology is used to design ESD protection devices. Based on back-to-back diodes, these devices are dedicated to first stage, external ESD protection.
Back to back diodes are also used when the input voltage range is allowed to exceed the power supply. Figure 4 shows an amplifier that implements back to back ...